Developing a process for inducing selective growth in two dimensional layered materials (TDLMs) will allow for direct and non-destructive shaping of thin film transition metal dichalcogenides (TMDs). The process discussed here within utilizes a substrate surface functionalization to inhibit TMD growth in very specific, selected areas. The polymer functional layer (PFL) employed is garnered from conventional photolithography processes and can be used for multiple different growth methods, substrates, and materials. This pre-synthesis functionalization allows for designation of lateral growth pattern, shape, and size of the material without the need for post-synthesis mechanical modification, which can damage material lattice integrity at the cutting interface, adversely affecting TMD transport properties. Utilizing the method will allow for inducing nearly 100% selective area growth of materials synthesized via chemical vapor deposition (CVD), enabling non-destructive shaping of said materials for usage in photoelectrics, photovoltaics, and field effect transistors.
